Laser annealing of hydrogenated amorphous silicon
Abstract
Pulsed laser annealing of hydrogenated amorphous silicon, glow-discharge-deposited on single crystal silicon, shows partial crystallization without significant loss of hydrogen. After laser annealing up to 60 MW/cm2, the photoluminescence spectrum exhibits only a very slight shift to lower energy. This contrasts with thermally induced dehydrogenation which causes a large spectral shift. Also thermally induced crystallization occurs above 700‡C where dehydrogenation is complete.
- Publication:
-
Journal of Electronic Materials
- Pub Date:
- September 1980
- DOI:
- 10.1007/BF02822725
- Bibcode:
- 1980JEMat...9..905P