Statistical variations in failure thresholds of silicon NPN transistors subjected to electrical overstress
Abstract
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1980
- DOI:
- Bibcode:
- 1980ITNS...27.1680A
- Keywords:
-
- Bipolar Transistors;
- Damage Assessment;
- Radiation Damage;
- Semiconductor Devices;
- System Failures;
- Weapon Systems;
- Military Technology;
- N-P-N Junctions;
- Statistical Analysis;
- Thresholds;
- Topology;
- Electronics and Electrical Engineering