Additional power VMOS radiation effects studies
Abstract
The failure tests of power vertical-channel MOS (VMOS) devices are reported. It is shown that at a 10 to the 13th n/sq cm and 2200 rad(Si) mixed neutron and gamma radiation level, no failures were observed in the BV(DS) characteristic of the devices tested. On the basis of these in-situ tests, it is not believed that the failures previously observed were due to handling.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- August 1980
- DOI:
- 10.1109/TNS.1980.4331014
- Bibcode:
- 1980ITNS...27.1329R
- Keywords:
-
- Electronic Equipment Tests;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Power Efficiency;
- Radiation Effects;
- Gamma Rays;
- N-P-N Junctions;
- Neutron Irradiation;
- Electronics and Electrical Engineering