Determination of the electrode capacitance matrix for GaAs FET's
Abstract
In this paper, a method is presented which provides the electrode capacitance matrix for GaAs FET's. The method incorporates a Green's function, valid for conductors printed on or embedded in a grounded substrate, with the moment method technique. Although calculations for various geometries of printed conductors are considered, emphasis is placed on the computation of self- and mutual-capacitances for the source, gate, drain equivalent circuit of a GaAs FET. As an example, the speed power characteristics of a depletion-mode GaAs FET inverter circuit are examined, as a function of device width, pad and gate length.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- May 1980
- DOI:
- 10.1109/TMTT.1980.1130101
- Bibcode:
- 1980ITMTT..28..459A
- Keywords:
-
- Capacitance;
- Electrodes;
- Field Effect Transistors;
- Gallium Arsenides;
- Matrices (Mathematics);
- Microwave Circuits;
- Computer Storage Devices;
- Electric Conductors;
- Green'S Functions;
- Integrated Circuits;
- Inverters;
- Printed Circuits;
- Electronics and Electrical Engineering