A MESFET model for use in the design of GaAs integrated circuits
Abstract
The paper presents a MESFET model that is suitable for use in conventional, time-domain circuit simulation programs. It is reported that the parameters of the model are evaluated from experimental data as well as from more detailed device analysis. The model is shown to be more complete than earlier models, which neglect transit-time and other effects. Finally, an integrated circuit design example is discussed.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- May 1980
- DOI:
- 10.1109/TMTT.1980.1130099
- Bibcode:
- 1980ITMTT..28..448C
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Network Synthesis;
- Schottky Diodes;
- Capacitance;
- Gates (Circuits);
- Logic Circuits;
- Mathematical Models;
- Time Response;
- Transit Time;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering