Switching characteristics of nonlinear field-effect transistors - Gallium-arsenide versus silicon
Abstract
A study of the switching properties of GaAs FET's and other nonlinear elements whose high field velocity saturates without negative differential mobility demonstrates that the high-bias switching times of GaAs are determined by velocity saturation. Silicon switches are also studied, and situations where GaAs and Si switching properties may be similar are discussed.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- May 1980
- DOI:
- Bibcode:
- 1980ITMTT..28..442G
- Keywords:
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- Field Effect Transistors;
- Gallium Arsenides;
- Silicon Transistors;
- Switching Circuits;
- Transistor Circuits;
- Electron Mobility;
- Integrated Circuits;
- Ndm Semiconductor Devices;
- Nonlinear Systems;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering