Application of the two-way balanced amplifier concept to wide-band power amplification using GaAs MESFET's
Abstract
An X-band GaAs FET power amplifier has been developed, significantly extending the bandwidth capabilities of such amplifiers reported to date. An output power of 1 W with an associated gain of 7.7 dB was achieved from 7.25 to 12.0 GHz by means of combining the power of two amplifier modules. Each of these modules consists of two balanced submodules cascaded to a two-stage unit. The transistor used in the 'two-way balanced amplifier' has gate dimensions of 1000 x 1 micron. The technology, RF performance, and characterization of the transistor are discussed in detail, as are the design and performance of both the single-ended and two-way balanced amplifier modules.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- March 1980
- DOI:
- 10.1109/TMTT.1980.1130037
- Bibcode:
- 1980ITMTT..28..172N
- Keywords:
-
- Amplifier Design;
- Broadband Amplifiers;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Power Amplifiers;
- Electronic Modules;
- Frequency Response;
- Metal Surfaces;
- Power Gain;
- Schottky Diodes;
- Superhigh Frequencies;
- Transistor Amplifiers;
- Electronics and Electrical Engineering