GaAs Hall element fabricated by ion implantation
Abstract
A planar-structure Hall element has been fabricated using submicrometer active layers formed by selenium ion implantation in semiinsulating GaAs. Selenium ion implantation was performed at 300 deg C and the annealing was carried out at a temperature between 750 and 900 deg C for about 30 min in an H2 atmosphere with RF-sputtered silicon oxide on silicon nitride encapsulation. The Hall element generates a very high output voltage, 5 V for 15 kG at 20 mA, with a small temperature coefficient less than 0.02 percent/deg C in a temperature range from -50 to 200 deg C. The linearity coefficient of magnetic field dependence of the output voltage is smaller than 0.1 percent/kG.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 1980
- DOI:
- Bibcode:
- 1980ITED...27.1188T
- Keywords:
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- Hall Effect;
- Ion Implantation;
- Network Synthesis;
- Semiconductor Devices;
- Solid State Devices;
- Annealing;
- Electric Potential;
- Gallium Arsenides;
- Planar Structures;
- Selenium;
- Electronics and Electrical Engineering