The use of GaAs-/Ga, Al/As heterostructures for FET devices
Abstract
A metalorganic VPE process applied to the growth of GaAs-GaAlAs heterostructures for FET devices is discussed. In the case of a heterobuffer, the high resistivity of a GaAlAs layer associated with its internal barrier gives measurably better electron confinement in a GaAs layer. For a HJFET, the versatility of the MO-VPE process allows single-run deposition for complex multilayer structures.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 1980
- DOI:
- 10.1109/T-ED.1980.19997
- Bibcode:
- 1980ITED...27.1141B
- Keywords:
-
- Aluminum Gallium Arsenides;
- Epitaxy;
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Volt-Ampere Characteristics;
- Crystal Structure;
- Microstructure;
- Microwave Transmission;
- Organometallic Compounds;
- Schottky Diodes;
- Vapor Phases;
- Electronics and Electrical Engineering