Super low-noise GaAs MESFET's with a deep-recess structure
Abstract
Super low-noise GaAs MESFET's for replacement of parametric amplifiers have been successfully developed by adopting a deep-recess structure. The structure of a 0.5-micron gate in a deeply recessed region with a cylindrical edge shape has enabled reduction of the source resistance to a half of that of conventional flat-type MESFET's. The noise figure was improved by more than 0.5 dB by this reduction of the source resistance, and less than 2.0-dB noise figure has been reproducibly obtained at 12 GHz. The best noise figures were 0.7 dB (14.9-dB gain) at 4 GHz and 1.68 dB (10.7-dB gain) at 12 GHz. The developed MESFET's were applied to two-stage amplifiers of 11.7-12.2-GHz band, and the noise figure obtained was 2.16 dB (Te: 185 K) at room temperature and 1.94 dB (Te: 163 K) at 0 C. This performance is good enough to replace some of parametric amplifiers.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 1980
- DOI:
- Bibcode:
- 1980ITED...27.1029O
- Keywords:
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- Field Effect Transistors;
- Gallium Arsenides;
- High Gain;
- Low Noise;
- Microwave Amplifiers;
- Schottky Diodes;
- Amplifier Design;
- Gates (Circuits);
- Metal Surfaces;
- Performance Prediction;
- Temperature Effects;
- Electronics and Electrical Engineering