Transient temperature behavior in pulsed doubledrift IMPATT diodes
Abstract
The temperatures in a pulsed doubledrift IMPATT diode are calculated as a function of position and time by a finite difference calculation using the alternating direction algorithm. The results are given as a function of pulse length and duty factor for a typical doubledrift diode designed to operate near X band. Techniques are described for choosing spatial meshes and time integrals which vary with position and time in a way that minimizes computation time. Numerical results are chosen to illustrate the distribution of temperature within the diode at different times during the pulse, the effect of a temperaturedependent breakdown voltage upon radial temperature distribution, and the interplay between the short thermaldiffusion times within the GaAs diode and the long times associated with the slow heatingup of the heat sink at great distances. An extended definition of thermal resistance for pulsed diodes is introduced and the implications upon reliability are discussed.
 Publication:

IEEE Transactions on Electron Devices
 Pub Date:
 February 1980
 DOI:
 10.1109/TED.1980.19880
 Bibcode:
 1980ITED...27..433H
 Keywords:

 Avalanche Diodes;
 Gallium Arsenides;
 Microwave Oscillators;
 Pulsed Radiation;
 Temperature Distribution;
 Transient Heating;
 Chips (Electronics);
 Component Reliability;
 Finite Difference Theory;
 Heat Sinks;
 Superhigh Frequencies;
 Thermal Diffusion;
 Thermal Resistance;
 Time Dependence;
 Electronics and Electrical Engineering