A new bipolar transistor - GAT
Abstract
A new bipolar transistor named Gate Associated Transistor (GAT) was proposed and the operating mechanisms were verified. The structure of the GAT has a unique base region consisting of an FET merged into the base of a standard bipolar transistor. The operating mechanisms and characteristics of the GAT were investigated and compared with those of standard power transistors. The most outstanding feature of the GAT was a large area for safe operation.
- Publication:
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IEEE Transactions on Electron Devices
- Pub Date:
- February 1980
- DOI:
- Bibcode:
- 1980ITED...27..373K
- Keywords:
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- Bipolar Transistors;
- Field Effect Transistors;
- Gates (Circuits);
- Power Conditioning;
- Volt-Ampere Characteristics;
- Equivalent Circuits;
- Fabrication;
- Metal Oxide Semiconductors;
- Performance Tests;
- Switching Circuits;
- Technology Assessment;
- Time Response;
- Electronics and Electrical Engineering