A 600-volt MOSFET designed for low on-resistance
Abstract
A 600-V vertical power MOSFET with low on-resistance is described. The low resistance is achieved by means of achieving near-ideal drain junction breakdown voltage and reduced drain spreading resistance from the use of an extended channel design. The various tradeoffs inherent in the design are discussed. Both calculated and experimental data are presented. The remote source configuration of the experimental device is also discussed.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1980
- DOI:
- 10.1109/T-ED.1980.19866
- Bibcode:
- 1980ITED...27..343T
- Keywords:
-
- Field Effect Transistors;
- High Voltages;
- Low Resistance;
- Metal Oxide Semiconductors;
- Power Conditioning;
- Amplifier Design;
- Majority Carriers;
- Tradeoffs;
- Waveforms;
- Electronics and Electrical Engineering