Technology development for InSb infrared imagers
Abstract
The paper deals with the primary or base technologies required to fabricate InSb detectors in either linear-array structures or two-dimensional CID imagers. The fabrication and characteristics of InSb junctions and MOSFETs are also described. The feasibility of future monolithic integration of shift registers and preamplifier systems is demonstrated.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- January 1980
- Bibcode:
- 1980ITED...27..170W
- Keywords:
-
- Charge Transfer Devices;
- Indium Antimonides;
- Infrared Detectors;
- Integrated Circuits;
- Metal Oxide Semiconductors;
- Technology Assessment;
- Fabrication;
- Field Effect Transistors;
- Infrared Imagery;
- Linear Arrays;
- P-N Junctions;
- Preamplifiers;
- Schottky Diodes;
- Shift Registers;
- Volt-Ampere Characteristics;
- Instrumentation and Photography