Temperature limitations for IR extrinsic and intrinsic photodetectors
Abstract
Infrared extrinsic and intrinsic photodetectors are studied theoretically to establish parameters that control detectivity limitations. A comparison of the temperature limitations of the two types of photodetectors provides an explanation of the temperature superiority of the intrinsic detector in terms of the ratio of the recombination coefficient to the absorption cross-section. It is shown that when the recombination coefficients are radiative-limited both types of detectors have identical operational temperatures for the same spectral cutoff wavelength, refractive index and quantum efficiency.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- January 1980
- DOI:
- 10.1109/T-ED.1980.19828
- Bibcode:
- 1980ITED...27..109S
- Keywords:
-
- Infrared Detectors;
- Operating Temperature;
- Photometers;
- Semiconductor Devices;
- Temperature Effects;
- Absorption Cross Sections;
- Doped Crystals;
- Impurities;
- Light Transmission;
- Radiative Recombination;
- Recombination Coefficient;
- Silicon Radiation Detectors;
- Instrumentation and Photography