Ion implantation doping of Cd/0.2/Hg/0.8/Te for infrared detectors
Abstract
A wide variety of elements were investigated as dopants for Cd(0.2)Hg(0.8)Te by ion implantation. In all cases the elements showed either n-type or p-type doping depending on their position in the periodic table. The best results could be obtained using silver and phosphorus. Diodes produced by implantation of these elements gave a responsivity up to 6 A/W. A new theory on the range and range straggling of ions in CdHgTe was developed and checked by profile measurements with boron.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- January 1980
- DOI:
- Bibcode:
- 1980ITED...27...58R
- Keywords:
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- Cadmium Tellurides;
- Doped Crystals;
- Infrared Detectors;
- Ion Implantation;
- Mercury Tellurides;
- Additives;
- Charge Coupled Devices;
- Phosphorus;
- Photovoltaic Effect;
- Semiconductor Junctions;
- Silver;
- Instrumentation and Photography