1/f noise in /Hg, Cd/Te photodiodes
Abstract
In this article results of experiments to characterize 1/f noise in Hg(0.7)Cd(0.3)Te n(+)-on-p junction photodiodes are presented. Under zero-bias voltage conditions, the photodiodes display no 1/f noise, even in the presence of large photocurrents. Under reverse-bias voltage operation, 1/f noise is observed. In these experiments, the 1/f noise was measured as a function of temperature, diode bias voltage, and photon flux. Since these parameters varied the relative contributions of the various current mechanisms, the diode current mechanism responsible for 1/f noise was isolated. It was found that 1/f noise is independent of photocurrent and diffusion current but is linearly related to surface generation current. It is proposed that 1/f noise in reverse-biased (Hg, Cd)Te photodiodes is a result of modulation of the surface generation current by fluctuations in the surface potential.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- January 1980
- DOI:
- 10.1109/T-ED.1980.19817
- Bibcode:
- 1980ITED...27...43T
- Keywords:
-
- Cadmium Tellurides;
- Mercury Tellurides;
- Noise Spectra;
- P-N Junctions;
- Photodiodes;
- Bias;
- Electromagnetic Noise Measurement;
- Temperature Dependence;
- Temperature Effects;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering