Charge-coupled devices in gallium arsenide
Abstract
A Schottky barrier gate buried-channel charge-coupled device (CCD) with a channel layer thickness in the range 1-2 microns has been fabricated in GaAs. The device is organized as a four-phase CCD and includes an on-chip amplifier. The device has been measured at clock frequencies of up to 500 MHz; the transfer efficiency up to 150 MHz has been verified to be greater than 0.999 per transfer. Applications of high speed GaAs CCDs are briefly discussed.
- Publication:
-
IEE Proceedings: Solid-State Electron Devices
- Pub Date:
- October 1980
- Bibcode:
- 1980IPSSE.127..278D
- Keywords:
-
- Charge Coupled Devices;
- Gallium Arsenides;
- Integrated Circuits;
- Schottky Diodes;
- Technology Assessment;
- Charge Transfer;
- Chips (Electronics);
- Fabrication;
- Packing Density;
- Time Lag;
- Transit Time;
- Electronics and Electrical Engineering