Injection phase delay in high-power Baritt oscillators
Abstract
Large-signal injection phase delay in Baritt oscillators can be estimated from the measured d.c. and microwave characteristics of the device used, provided a constant transit time with bias current is assumed. This has been examined in the present work and a simple method has been described with a practical example.
- Publication:
-
IEE Proceedings: Solid-State Electron Devices
- Pub Date:
- June 1980
- Bibcode:
- 1980IPSSE.127..109A
- Keywords:
-
- Carrier Injection;
- Microwave Oscillators;
- Phase Shift;
- Power Conditioning;
- Volt-Ampere Characteristics;
- Electron Tunneling;
- Energy Bands;
- Negative Resistance Devices;
- Oxide Films;
- P-N Junctions;
- Schottky Diodes;
- Time Lag;
- Transit Time;
- Electronics and Electrical Engineering