Investigation of Ar ion implant gettering of gold in silicon by M.O.S. and Rutherford backscattering techniques
Abstract
- Publication:
-
IEE Proceedings: Solid-State Electron Devices
- Pub Date:
- February 1980
- Bibcode:
- 1980IPSSE.127...29N
- Keywords:
-
- Argon;
- Backscattering;
- Gold;
- Ion Implantation;
- Metal Oxide Semiconductors;
- Silicon;
- Life (Durability);
- Volt-Ampere Characteristics;
- Solid-State Physics