Comparison of the responsivity of W-Ni point contact MBM diodes with W-Si point contact Schottky diodes
Abstract
The responsivities of the W-Ni point contact MBM diode and the W-Si point contact Schottky diode are compared at 9.5 GHz under identical conditions. The MBM diode has almost half the responsivity of the Schottky diode and was measured to be about 20 V/W for a 550 ohm termination. The responsivity of the MBM diode decreases with an increase of the frequency; this results from antenna properties of the whisker and the relaxation behavior of the metallic whisker antenna.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- December 1980
- DOI:
- Bibcode:
- 1980IJQE...16.1372Y
- Keywords:
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- Electric Contacts;
- Electron Tunneling;
- Metal Surfaces;
- Schottky Diodes;
- Tungsten;
- Tunnel Diodes;
- Barrier Layers;
- Electric Wire;
- Frequency Response;
- Nickel;
- Performance Tests;
- Silicon;
- Electronics and Electrical Engineering