Pulsed V-band m.b.e. Si Impatt diodes
Abstract
Single drift Impatt diodes of m.b.e. material are described which deliver pulse output power over 5 W at V-band. Maximum chirp frequency is less than 10 MHz, making the devices favourable for coherent radar applications.
- Publication:
-
Electronics Letters
- Pub Date:
- November 1980
- DOI:
- Bibcode:
- 1980ElL....16..865F
- Keywords:
-
- Avalanche Diodes;
- Extremely High Frequencies;
- Microwave Oscillators;
- Molecular Beam Epitaxy;
- Silicon Junctions;
- Chirp Signals;
- Fabrication;
- Millimeter Waves;
- Signal Measurement;
- Electronics and Electrical Engineering