Effect of p-doping on carrier lifetime and threshold current density of 1.3 micron GaInAsP/InP lasers by liquid-phase epitaxy - ADS

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Effect of p-doping on carrier lifetime and threshold current density of 1.3 micron GaInAsP/InP lasers by liquid-phase epitaxy

Ng, W.
Liu, Y. Z.

Publication:

Electronics Letters

Pub Date:

August 1980

DOI:

10.1049/el:19800492

Bibcode:

1980ElL....16..693N

Keywords:

Carrier Lifetime;
Charge Carriers;
Doped Crystals;
Gallium Arsenide Lasers;
Heterojunction Devices;
Semiconductor Lasers;
Threshold Currents;
Current Density;
Electron Density (Concentration);
Emission Spectra;
Epitaxy;
Gallium Phosphides;
Indium Phosphides;
Liquid Phases;
Lasers and Masers

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