Electron dynamics in P-Si M.O.S.F.E.T. inversion channels
Abstract
An attempt is presented in modeling at room temperature the carrier dynamics in the inversion layer using a Monte Carlo simulation. The interaction of inversion carriers with the surface is regarded successively as perfectly specular and perfectly diffuse. A comparison of the results with the experimental data of Coen and Muller gives reasonable agreement in a wide range of electric field.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1980
- DOI:
- Bibcode:
- 1980ElL....16..664Z
- Keywords:
-
- Carrier Density (Solid State);
- Electron Mobility;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- P-Type Semiconductors;
- Electric Fields;
- Electron Scattering;
- Inversions;
- Monte Carlo Method;
- Silicon Dioxide;
- Specular Reflection;
- Surface Diffusion;
- Electronics and Electrical Engineering