Ion implanted GaAs bipolar transistors
Abstract
Fabrication of bipolar GaAs transistors by implantation of Be and Se into n-type bulk GaAs is described. Device preparation is outlined, and test results are presented. It is shown that a low carrier lifetime in a base rather than a poor emitter injection efficiency is responsible for low current gain (about 8).
- Publication:
-
Electronics Letters
- Pub Date:
- July 1980
- DOI:
- Bibcode:
- 1980ElL....16..637Y
- Keywords:
-
- Bipolar Transistors;
- Gallium Arsenides;
- Ion Implantation;
- Microwave Amplifiers;
- N-P-N Junctions;
- Volt-Ampere Characteristics;
- Beryllium;
- Carrier Lifetime;
- Electron Diffusion;
- Fabrication;
- Hole Mobility;
- N-Type Semiconductors;
- Power Gain;
- Selenium;
- Electronics and Electrical Engineering