Relationship between power added efficiency and gate-drain avalanche in GaAs M.E.S.F.E.T.s
Abstract
Efficiency is an important consideration for satellite applications of GaAs power MESFETs since battery life is a central issue in overall design. Pulse avalanche measurements in the transistor three-terminal configuration show that pulse gate-drain avalanche is the primary variable affecting power added efficiency. This result points to simple design principles that can be used to maximize efficiency.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1980
- DOI:
- Bibcode:
- 1980ElL....16..459W
- Keywords:
-
- Electron Avalanche;
- Field Effect Transistors;
- Gallium Arsenides;
- Power Efficiency;
- Schottky Diodes;
- Design Analysis;
- Energy Consumption;
- Gates (Circuits);
- Metal Surfaces;
- Satellite Lifetime;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering