GaInAsP/InP laser with monolithically integrated monitoring detector
Abstract
Monolithic fabrication of a GaInAsP/InP laser with an etched mirror and monitoring detector is reported. Stripe-geometry lasers operating at wavelengths of about 1.3 micron with threshold current of only 300 mA have been obtained. The monitoring detector on the same InP substrate was confirmed to operate with high sensitivy, comparable with that of an external Ge photodiode.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1980
- DOI:
- Bibcode:
- 1980ElL....16..342I
- Keywords:
-
- Heterojunction Devices;
- Indium Phosphides;
- Infrared Detectors;
- Infrared Lasers;
- Integrated Optics;
- Semiconductor Lasers;
- Fabrication;
- Gallium Arsenide Lasers;
- Gallium Phosphides;
- Indium Arsenides;
- Mirrors;
- Photodiodes;
- Threshold Currents;
- Lasers and Masers