GaAs gigabit logic circuits using normally-off M.E.S.F.E.T.s
Abstract
Normally-off GaAs MESFET logic circuits fabricated by electron beam lithography have exhibited excellent high speed switching characteristics. The highest switching speed evaluated from a 15-stage ring oscillator is 30 ps per gate with a power dissipation of 1.9 mW. Binary frequency dividers have been fabricated with D-type flip-flops operating up to 3 GHz. A divide-by-eight counter has also operated at 2.5 GHz.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1980
- DOI:
- Bibcode:
- 1980ElL....16..315M
- Keywords:
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- Field Effect Transistors;
- Gallium Arsenides;
- Logic Circuits;
- Microwave Oscillators;
- Microwave Switching;
- Schottky Diodes;
- Electron Beams;
- Energy Dissipation;
- Flip-Flops;
- Frequency Dividers;
- Lithography;
- Switching Circuits;
- Time Response;
- Electronics and Electrical Engineering