High performance millimetre Ge-GaAs mixer diode for low L.O. power applications
Abstract
Epitaxial Ge/GaAs low-barrier-height Ti-Mo-Au Schottky-barrier diodes exhibit a noise figure of 6.5 dB at 36 GHz and at 0.75 mW of local oscillator (LO) power. These diodes represent significant improvement over standard GaAs-Ti diodes at low power levels.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1980
- DOI:
- 10.1049/el:19800187
- Bibcode:
- 1980ElL....16..254C
- Keywords:
-
- Gallium Arsenides;
- Microwave Oscillators;
- Millimeter Waves;
- Mixing Circuits;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Epitaxy;
- Germanium;
- Semiconductor Diodes;
- Signal Mixing;
- Titanium;
- Electronics and Electrical Engineering