Single-mode conditions for Ga<SUB>x</SUB>In<SUB>1 - x</SUB>As<SUB>y</SUB>P<SUB>1 - y</SUB>/InP double-heterostructure strip waveguides with Ga<SUB>x'</SUB>In<SUB>1 - x'</SUB>As<SUB>y'</SUB>P<SUB>1 - y'</SUB> side bounding layers - ADS

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Single-mode conditions for Ga_xIn_{1 - x}As_yP_{1 - y}/InP double-heterostructure strip waveguides with Ga_x'In_{1 - x'}As_y'P_{1 - y'} side bounding layers

Iga, K.

Publication:

Applied Optics

Pub Date:

September 1980

DOI:

10.1364/AO.19.002940

Bibcode:

1980ApOpt..19.2940I

Keywords:

Gallium Arsenide Lasers;
Heterojunction Devices;
Optical Waveguides;
Propagation Modes;
Strip Transmission Lines;
Gradient Index Optics;
Indium Arsenides;
Indium Phosphides;
Refractivity;
Lasers and Masers;
LASERS: SEMICONDUCTOR

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