Submicron FET's using molecular beam epitaxy
Abstract
Electron-beam exposure and MBE material have been used to achieve quarter-micron gate length GaAs FETs. A noise figure of 2.2 dB with an associated gain of 12 dB has been measured at 8 GHz.
- Publication:
-
Annual Report
- Pub Date:
- June 1979
- Bibcode:
- 1979vara.reptS....B
- Keywords:
-
- Electron Beams;
- Field Effect Transistors;
- Molecular Beams;
- Semiconductor Devices;
- Anodic Coatings;
- Electronic Equipment Tests;
- Epitaxy;
- Gallium Arsenides;
- Low Noise;
- Thin Films;
- Electronics and Electrical Engineering