Medium power silicon transistors

The development of various types of transistors is described as well as economical processes for fabricating silicon power transistors in triple diffusion, single diffusion, epibase technology. Problems related to materials, thermal stresses, diffusion proceses, metallization, and assembly are addressed. The best structures for diffusion and metallization are considered in relation to the electrical behavior which is demonstrated of the components. Reliability assessment is discussed and some circuits are examined.