Planar transistors and impatt diodes with ion implantation

Low frequency planar n-p-n and p-n-p transistors were developed using ion implantation of boron and phosphorus by a drive-in diffusion. The electrical parameters of the transistors are comparable with conventionally produced transistors. The noise figure was improved and production tolerances were reduced. Silicon avalanch diodes for the microwave range were fabricated with implanted p-n junctions and tested for their high frequency characteristics. These diodes, made in an improved upside down technqiue, delivered output power of up to 40 mW at 30 GHz. Reverse leakage current and current carrying capacity were comparable to diffused structures.