Ku-band field-effect power transistors
Abstract
A single stage amplifier was developed using an 8 gate, 1200 micrometer width device to give a gain of 3.3 + or - 0.1 dB over the 14.4 to 15.4 GHz band with an output power of 0.48 W and 15% minimum efficiency with 0.255 W of input power. With two 8 gate devices combined and matched on the device carrier, using a lumped element format, a gain of 3 dB was attained over the 14.5 to 15.5 GHz band with a maximum efficiency of 9.9% for an output power of 0.8 W.
- Publication:
-
Final Report
- Pub Date:
- September 1979
- Bibcode:
- 1979rca..rept.....T
- Keywords:
-
- Amplifiers;
- Field Effect Transistors;
- Superhigh Frequencies;
- Epitaxy;
- Gallium Arsenides;
- Gates (Circuits);
- Electronics and Electrical Engineering