Improvement of phosphorus diffused silicon solar cells by laser treatment
Abstract
The paper demonstrates that the inactive excess of phosphorus which results from the maximum of 4 x 10 to the 20th/cu cm of electrically active phosphorus introduced into silicon by diffusion, while the total phosphorus concentration may be higher than 10 to the 21st/cu cm, can be partly reactivated by irradiation with short ruby laser pulses. The laser melts the silicon surface, thereby lowering silicon sheet resistances. A study of this effect and the influences of diffusion and irradiation conditions was made using SIMS, RBS, electrical and optical methods.
- Publication:
-
2nd Photovoltaic Solar Energy Conference
- Pub Date:
- 1979
- Bibcode:
- 1979pvse.conf..768F
- Keywords:
-
- Energy Conversion Efficiency;
- Laser Applications;
- Phosphorus;
- Ruby Lasers;
- Solar Cells;
- Surface Diffusion;
- Crystal Lattices;
- Electric Current;
- Electrical Resistance;
- High Voltages;
- Laser Modes;
- Laser Outputs;
- P-Type Semiconductors;
- Solid-State Physics