Preparation and properties of nitrogen-doped amorphous silicon
Abstract
The paper discusses results of the study carried out to n-dope RF sputtered amorphous silicon by the addition of gaseous nitrogen. It is shown that the photoconductivity of such doped films may be orders of magnitude higher than that of undoped RF sputtered films.
- Publication:
-
2nd Photovoltaic Solar Energy Conference
- Pub Date:
- 1979
- Bibcode:
- 1979pvse.conf..278H
- Keywords:
-
- Amorphous Semiconductors;
- Amorphous Silicon;
- Doped Crystals;
- Gas-Solid Interactions;
- Nitrogen;
- Photoconductivity;
- Film Thickness;
- Gas Pressure;
- Glow Discharges;
- Sputtering;
- Solid-State Physics