Measurement techniques for high power semiconductor materials and devices

Results of research directed toward the development of measurement methods for semiconductor materials and devices which will lead to more effective use of high-power semiconductor devices in applications for energy generation, transmission, conversion, and conservation are reported. Emphasis is on the development of measurement methods for materials for thyristors and rectifier diodes. The use of thermally stimulated current and capacitance measurements and other deep level measurement techniques developed as a means for characterizing lifetime-controlling or leakage source defects in power grade silicon material and devices are described. Procedures to enable spreading resistance measurements of thyristor starting material and layer profiles to be made on a reliable basis are included.