Advanced devices and components for the millimeter and submillimeter systems

Key topics are discussed related to low noise mixers, high efficiency multipliers, the use of quasi-optical techniques to reduce circuit losses, and the development of very high-Q devices applicable to the millimeter and submillimeter wavelengths. In particular, the development of a highly reliable metalized GaAs Ta-Schottky barrier diode with native-oxide passivation is described. The zero bias cutoff frequency of these diodes is greater than 1000 GHz when measured accurately near 60 GHz with a zero bias junction capacitance near 0.1 pF. This zero bias cutoff frequency is approximately twice the value for a comparable nonmetalized device.