A study of trends and techniques for space base electronics
Abstract
The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensional modeling program was written for the simulation of short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide-silicon interface. In solving current continuity equation, the program does not converge. However, solving the two dimensional Poisson equation for the potential distribution was achieved. The status of other 2D MOSFET simulation programs are summarized.
- Publication:
-
Quarterly Progress Report
- Pub Date:
- January 1979
- Bibcode:
- 1979msu..reptS....T
- Keywords:
-
- Field Effect Transistors;
- Mathematical Models;
- Microelectronics;
- Space Bases;
- Computerized Simulation;
- Electric Potential;
- Finite Difference Theory;
- Majority Carriers;
- Plasma Etching;
- Poisson Equation;
- Two Dimensional Models;
- Electronics and Electrical Engineering