Electrooptical devices
Abstract
This report covers work carried out with support of the Department of the Air Force during the period 1 October 1978 through 31 March 1979. The current objectives of the electrooptical device program are: (1) to perform life tests on GaIn AsP/InP double-heterostructure (DH) diode lasers operating in the 1.0- to 1.3-micrometer wavelength region and analyze the degradation mechanisms, and (2) to fabricate and study avalanche photodiodes of similar composition GaInAsP operating in the same wavelength region.
- Publication:
-
Massachusetts Inst. of Tech. Report
- Pub Date:
- March 1979
- Bibcode:
- 1979mit..reptT....H
- Keywords:
-
- Electro-Optics;
- Photodiodes;
- Semiconductor Lasers;
- Gallium Arsenides;
- Holes (Electron Deficiencies);
- Indium Phosphates;
- Ionization Coefficients;
- Lasers and Masers