Development of solid state devices and amplifiers for phased array radar applications

Solid state microwave devices are currently being used in both UHF and L band radar systems and are expected to be employed in future S and X band radar systems. Silicon bipolar transistors are clearly preferred at lower frequencies. However, silicon TRAPATTs offer an alternative at S band and gallium arsenide field effect transistors presently are most attractive for X band radars. This paper describes device development programs for radar applications. The present state of the art of microwave oscillators and amplifiers is presented and compared with performance levels necessary for these components to be considered for systems use. A description of silicon TRAPATT devices developed at Naval Research Laboratory for wide pulse and CW applications as well as microwave performance data is included. In addition, the present status of Navy programs to develop other devices and amplifiers for L, S and X band radars is presented.