Submicrometer CMOS/SOS in electro-optical and radar sensor signal processors

Key characteristics and tradeoffs concerning electro-optical and radar requirements, architectures, and future technology trends are considered. The effects of device scaling on CMOS/SOS performance parameters at submicrometer dimensions are discussed, along with experimental data from submicrometer CMOS/SOS test circuits. It is concluded that future trends are toward global matched filtering of massive amounts of data. Increased speeds and chip density will lead to more on-chip processing, including memory, arithmetic and control. The analysis of performance of ring oscillators with 0.9 micrometer gates demonstrates short on-chip propagation delays (less than 150 psec). Propagation delays below 100 psec are projected for 0.8 micrometer ring oscillator with reduced gate resistivity, while improvement to 60 psec is predicted for 0.5 micron structures.