GaAs devices and monolithic integrated circuits
Abstract
The paper discusses the development of ion implanted GaAs FETs and their utilization in microwave and high speed circuits. Fabrication techniques and device characteristics are presented, and the attainable levels of device uniformity and reproducibility are emphasized. Highlights of development programs for realizing high-speed digital integrated circuits and monolithic microwave integrated circuits based on ion implanted GaAs FETs are noted. These new technologies are expected to give rise to exciting new systems concepts by virtue of unmatched speed and frequency capabilities of circuits in conjunction with low power requirements.
- Publication:
-
Military Electronics Defence Expo 1979
- Pub Date:
- 1979
- Bibcode:
- 1979mede.proc...13C
- Keywords:
-
- Fabrication;
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Ion Implantation;
- Microwave Circuits;
- Energy Consumption;
- High Speed;
- Logic Circuits;
- Power Conditioning;
- Technology Assessment;
- Time Response;
- Electronics and Electrical Engineering