Improved design method for X-band microstrip FET amplifiers without experimental adjustment techniques

A precise method of designing FET amplifiers is presented that enables one to establish a positive correlation between calculated design networks and the final results obtained through measurements. The method employs a two-stage FET amplifier at 12 GHz along with two transistors and input and output VSWR. It is concluded that the results that were obtained in the first design did not need any adjustment and that they prove the exactitude of the design method.