Diode step stress program for JANTX1N2970b
Abstract
Data for the purpose of evaluating the effect of power/temperature step stress was studied when applied to the zener diode JANTX1N2970B manufactured by Siemens and General Semiconductor, Inc. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. The tests for determining power/temperature stresses are described, and test results are discussed. Failure analyses for power stress, and temperature stress are presented.
- Publication:
-
Final Report DCA Reliability Lab
- Pub Date:
- February 1979
- Bibcode:
- 1979dcar.reptQU....
- Keywords:
-
- Diodes;
- Performance Tests;
- Stress Analysis;
- Electric Potential;
- Failure Analysis;
- Reliability Engineering;
- Thermal Stresses;
- Electronics and Electrical Engineering