Advanced ion implantation techniques

Three different applications of the ion implantation technique were developed and checked for their production compatibility. The implantation of gold ions into the back of diode wafers allowed a precise control of reverse recovery times, which was better by at least a factor of 2 compared with the conventional process. By implanting boron ions into the region near the surface of pnp transistors, the effects caused by inversion of the collector zone was successfully suppressed. Using the lateral component during diffusion from implanted sources HF field effect transistors were fabricated with channel lengths of about 2 microns. Measurements of the scattering parameters show that cut off frequencies of more than 1 GHz are possible.