n-GaAs/1-x/P/x/ Schottky-barrier photodiodes with forbidden band gradient
Abstract
The present study examines the spectral response of n-GaAs(1-x)P(x) Schottky-barrier photodiodes with forbidden band width gradient. It is shown that the steepness of longwave and shortwave spectral curves varies depending on phosphorus content in the metal/semiconductor contact region, when the halfwidth of the spectral band is in the range 0.24-0.26 eV. The quantum efficiency of the photodiode was 0.15-0.2 electron/photon.
- Publication:
-
Zhurnal Prikladnoi Spektroskopii
- Pub Date:
- July 1979
- Bibcode:
- 1979ZhPS...31..150O
- Keywords:
-
- Gallium Arsenides;
- Gallium Phosphides;
- Photodiodes;
- Schottky Diodes;
- Spectral Sensitivity;
- Crystal Defects;
- Epitaxy;
- Lattice Parameters;
- Solid Solutions;
- Spectrum Analysis;
- Temperature Effects;
- Thickness;
- Electronics and Electrical Engineering