Series resistance of epitaxial silicon Schottky diodes
Abstract
The paper presents calculations for the series resistance of silicon diodes with submicron epitaxial layers consisting of three parts: the contact resistance, the spread resistance of the substrate, and the resistance of the undepleted epitaxial layer. The influence of spacecharge width on series resistance is examined, and resistance as a function of bias voltage is shown for a 0.2 micron thickness layer, a diode diameter of 14 microns, and several dopant levels. It is determined that resistance depends on the diode bias since the spacecharge widths beneath the Schottky contact are varied by changing the bias voltages. The usual experimental determination of the series resistance, using U(I) characteristics, yields only an upper limit. The influence of this variable resistance on smallsignal frequency limit is also examined.
 Publication:

Wissenschaftliche Berichte AEG Telefunken
 Pub Date:
 1979
 Bibcode:
 1979WisBT..52..179K
 Keywords:

 Electrical Resistance;
 Epitaxy;
 Network Analysis;
 Schottky Diodes;
 Bias;
 Equivalent Circuits;
 Frequency Response;
 Rlc Circuits;
 Silicon;
 Space Charge;
 Electronics and Electrical Engineering