Computer simulation of integrated-injection logic devices

Three different types of a model for integrated-injection logic gates are discussed and compared with each other. These consist of a mathematical model obtained from a black box description, a macro-model of familiar devices such as transistors, and various injection models derived from partial currents. Attention is given to matrix notation and the resulting equations that are transformed into circuit diagrams. The parameters used for component properties, that lead to input/output characteristics, are examined and inserted into diode and control factor formulas. Apart from the derivations, the parameters of a standard module are determined for the mathematical model and the results are presented.