The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook
Abstract
The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- September 1979
- Bibcode:
- 1979STIN...8132385B
- Keywords:
-
- Cmos;
- Electronic Packaging;
- Fabrication;
- Integrated Circuits;
- Metallizing;
- Electrical Properties;
- Handbooks;
- N-Type Semiconductors;
- P-Type Semiconductors;
- Electronics and Electrical Engineering